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Drain Current Model for Double Gate Tunnel-FETs with InAs/Si Heterojunction and Source-Pocket Architecture
The practical use of tunnel field-effect transistors is retarded by the low on-state current. In this paper, the energy-band engineering of InAs/Si heterojunction and novel device structure of source-pocket concept are combined in a single tunnel field-effect transistor to extensively boost the devi...
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| Publicado no: | Nanomaterials (Basel) |
|---|---|
| Main Authors: | , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
MDPI
2019
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6410157/ https://ncbi.nlm.nih.gov/pubmed/30717154 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/nano9020181 |
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