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Description and Verification of the Fundamental Current Mechanisms in Silicon Carbide Schottky Barrier Diodes
Attempts to model the current through Schottky barrier diodes using the two fundamental mechanisms of thermionic emission and tunnelling are adversely impacted by defects and second order effects. This has led to the publication of countless different models to account for these effects, including s...
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| Publicat a: | Sci Rep |
|---|---|
| Autors principals: | , , , |
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Nature Publishing Group UK
2019
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| Matèries: | |
| Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6403215/ https://ncbi.nlm.nih.gov/pubmed/30842531 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-019-40287-1 |
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