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Barrier inhomogeneities limited current and 1/f noise transport in GaN based nanoscale Schottky barrier diodes
The electrical behaviour of Schottky barrier diodes realized on vertically standing individual GaN nanorods and array of nanorods is investigated. The Schottky diodes on individual nanorod show highest barrier height in comparison with large area diodes on nanorods array and epitaxial film which is...
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| Veröffentlicht in: | Sci Rep |
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| Hauptverfasser: | , , , , , , , , |
| Format: | Artigo |
| Sprache: | Inglês |
| Veröffentlicht: |
Nature Publishing Group
2016
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| Schlagworte: | |
| Online Zugang: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4901317/ https://ncbi.nlm.nih.gov/pubmed/27282258 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep27553 |
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