Wird geladen...

Barrier inhomogeneities limited current and 1/f noise transport in GaN based nanoscale Schottky barrier diodes

The electrical behaviour of Schottky barrier diodes realized on vertically standing individual GaN nanorods and array of nanorods is investigated. The Schottky diodes on individual nanorod show highest barrier height in comparison with large area diodes on nanorods array and epitaxial film which is...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Sci Rep
Hauptverfasser: Kumar, Ashutosh, Heilmann, M., Latzel, Michael, Kapoor, Raman, Sharma, Intu, Göbelt, M., Christiansen, Silke H., Kumar, Vikram, Singh, Rajendra
Format: Artigo
Sprache:Inglês
Veröffentlicht: Nature Publishing Group 2016
Schlagworte:
Online Zugang:https://ncbi.nlm.nih.gov/pmc/articles/PMC4901317/
https://ncbi.nlm.nih.gov/pubmed/27282258
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep27553
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!