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Barrier inhomogeneities limited current and 1/f noise transport in GaN based nanoscale Schottky barrier diodes
The electrical behaviour of Schottky barrier diodes realized on vertically standing individual GaN nanorods and array of nanorods is investigated. The Schottky diodes on individual nanorod show highest barrier height in comparison with large area diodes on nanorods array and epitaxial film which is...
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| Publicado no: | Sci Rep |
|---|---|
| Main Authors: | , , , , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Nature Publishing Group
2016
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4901317/ https://ncbi.nlm.nih.gov/pubmed/27282258 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep27553 |
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