Low-Temperature Plasma-Enhanced Atomic Layer Deposition of SiO(2) Using Carbon Dioxide

In this work, we report the successful growth of high-quality SiO(2) films by low-temperature plasma-enhanced atomic layer deposition using an oxidant which is compatible with moisture/oxygen sensitive materials. The SiO(2) films were grown at 90 °C using CO(2) and Bis(tertiary-butylamino)silane as...

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Vydáno v:Nanoscale Res Lett
Hlavní autoři: Zhu, Zhen, Sippola, Perttu, Ylivaara, Oili M. E., Modanese, Chiara, Di Sabatino, Marisa, Mizohata, Kenichiro, Merdes, Saoussen, Lipsanen, Harri, Savin, Hele
Médium: Artigo
Jazyk:Inglês
Vydáno: Springer US 2019
Témata:
Nano Express
On-line přístup:https://ncbi.nlm.nih.gov/pmc/articles/PMC6372707/
https://ncbi.nlm.nih.gov/pubmed/30747362
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-019-2889-y
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