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Altering the Optical Properties of GaAsSb-Capped InAs Quantum Dots by Means of InAlAs Interlayers
In this work, we investigate the optical properties of InAs quantum dots (QDs) capped with composite In(0.15)Al(0.85)As/GaAs(0.85)Sb(0.15) strain-reducing layers (SRLs) by means of high-resolution X-ray diffraction (HRXRD) and photoluminescence (PL) spectroscopy at 77 K. Thin In(0.15)Al(0.85)As laye...
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| Pubblicato in: | Nanoscale Res Lett |
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| Autori principali: | , , , , , , |
| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
Springer US
2019
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| Soggetti: | |
| Accesso online: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6358628/ https://ncbi.nlm.nih.gov/pubmed/30707322 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-019-2877-2 |
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