Altering the Optical Properties of GaAsSb-Capped InAs Quantum Dots by Means of InAlAs Interlayers

In this work, we investigate the optical properties of InAs quantum dots (QDs) capped with composite In(0.15)Al(0.85)As/GaAs(0.85)Sb(0.15) strain-reducing layers (SRLs) by means of high-resolution X-ray diffraction (HRXRD) and photoluminescence (PL) spectroscopy at 77 K. Thin In(0.15)Al(0.85)As laye...

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Udgivet i:Nanoscale Res Lett
Main Authors: Salhi, A., Alshaibani, S., Alaskar, Y., Albrithen, H., Albadri, A., Alyamani, A., Missous, M.
Format: Artigo
Sprog:Inglês
Udgivet: Springer US 2019
Fag:
Nano Express
Online adgang:https://ncbi.nlm.nih.gov/pmc/articles/PMC6358628/
https://ncbi.nlm.nih.gov/pubmed/30707322
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-019-2877-2
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