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Impact of N on the atomic-scale Sb distribution in quaternary GaAsSbN-capped InAs quantum dots
The use of GaAsSbN capping layers on InAs/GaAs quantum dots (QDs) has recently been proposed for micro- and optoelectronic applications for their ability to independently tailor electron and hole confinement potentials. However, there is a lack of knowledge about the structural and compositional cha...
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| Main Authors: | , , , , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Springer
2012
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3552833/ https://ncbi.nlm.nih.gov/pubmed/23181950 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-7-653 |
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