טוען...
Impact of N on the atomic-scale Sb distribution in quaternary GaAsSbN-capped InAs quantum dots
The use of GaAsSbN capping layers on InAs/GaAs quantum dots (QDs) has recently been proposed for micro- and optoelectronic applications for their ability to independently tailor electron and hole confinement potentials. However, there is a lack of knowledge about the structural and compositional cha...
שמור ב:
| Main Authors: | , , , , , , |
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| פורמט: | Artigo |
| שפה: | Inglês |
| יצא לאור: |
Springer
2012
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| נושאים: | |
| גישה מקוונת: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3552833/ https://ncbi.nlm.nih.gov/pubmed/23181950 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-7-653 |
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