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Two-Parameter Quasi-Ballistic Transport Model for Nanoscale Transistors
We show that by adding only two fitting parameters to a purely ballistic transport model, we can accurately characterize the current-voltage characteristics of nanoscale MOSFETs. The model is an extension of Natori’s model and includes transmission probability and drain-channel coupling parameter. T...
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| Publicat a: | Sci Rep |
|---|---|
| Autors principals: | , , , , |
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Nature Publishing Group UK
2019
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| Matèries: | |
| Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6346087/ https://ncbi.nlm.nih.gov/pubmed/30679517 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-018-36692-7 |
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