Controlling the Polarity of the Molecular Beam Epitaxy Grown In-Bi Atomic Film on the Si(111) Surface

Synchrotron radiation core-level photoemission spectroscopy, scanning tunneling microscopy (STM), and first-principles calculations have been utilized to explore the growth processes and the atomic structure of the resulting films during the two-step molecular beam epitaxy (MBE) of In and Bi on the...

Full description

Saved in:
Bibliographic Details
Published in:Sci Rep
Main Authors: Lin, Cho-Ying, Hsu, Chia-Hsiu, Huang, Yu-Zhang, Hsieh, Shih-Ching, Chen, Han-De, Huang, Li, Huang, Zhi-Quan, Chuang, Feng-Chuan, Lin, Deng-Sung
Format: Artigo
Language:Inglês
Published: Nature Publishing Group UK 2019
Subjects:
Article
Online Access:https://ncbi.nlm.nih.gov/pmc/articles/PMC6345972/
https://ncbi.nlm.nih.gov/pubmed/30679630
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-018-37051-2
Tags: Add Tag
No Tags, Be the first to tag this record!

Similar Items