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InGaAs FinFETs Directly Integrated on Silicon by Selective Growth in Oxide Cavities
III-V semiconductors are being considered as promising candidates to replace silicon channel for low-power logic and RF applications in advanced technology nodes. InGaAs is particularly suitable as the channel material in n-type metal-oxide-semiconductor field-effect transistors (MOSFETs), due to it...
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| 出版年: | Materials (Basel) |
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| 主要な著者: | , , , , , , |
| フォーマット: | Artigo |
| 言語: | Inglês |
| 出版事項: |
MDPI
2018
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| 主題: | |
| オンライン･アクセス: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6337424/ https://ncbi.nlm.nih.gov/pubmed/30591676 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma12010087 |
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