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RTN and Annealing Related to Stress and Temperature in FIND RRAM Array
In this work, an observation on random telegraph noise (RTN) signal in the read current of a FinFET dielectric RRAM (FIND RRAM) device is presented. The RTN signal of a FIND RRAM cell is found to change after the device being subjected to cycling stress. After undergoing cycling stress, RRAM cells h...
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| Publicado en: | Nanoscale Res Lett |
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| Autores principales: | , , |
| Formato: | Artigo |
| Lenguaje: | Inglês |
| Publicado: |
Springer US
2019
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| Materias: | |
| Acceso en línea: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6325054/ https://ncbi.nlm.nih.gov/pubmed/30623262 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-018-2846-1 |
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