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Bendable Single Crystal Silicon Nanomembrane Thin Film Transistors with Improved Low-Temperature Processed Metal/n-Si Ohmic Contact by Inserting TiO(2) Interlayer
Bendable single crystal silicon nanomembrane thin film transistors (SiNMs TFTs), employing a simple method which can improve the metal/n-Silicon (Si) contact characteristics by inserting the titanium dioxide (TiO(2)) interlayer deposited by atomic layer deposition (ALD) at a low temperature (90 °C),...
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| Veröffentlicht in: | Nanomaterials (Basel) |
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| Hauptverfasser: | , , , , , , , |
| Format: | Artigo |
| Sprache: | Inglês |
| Veröffentlicht: |
MDPI
2018
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| Schlagworte: | |
| Online Zugang: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6316488/ https://ncbi.nlm.nih.gov/pubmed/30558367 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/nano8121060 |
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