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Tunability of p- and n-channel TiO(x) thin film transistors
To acquire device-quality TiO(x) films usually needs high-temperature growth or additional post-thermal treatment. However, both processes make it very difficult to form the p-type TiO(x) even under oxygen-poor growth condition. With the aid of high energy generated by high power impulse magnetron s...
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| Publicado no: | Sci Rep |
|---|---|
| Main Authors: | , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Nature Publishing Group UK
2018
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6006147/ https://ncbi.nlm.nih.gov/pubmed/29915301 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-018-27598-5 |
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