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Improving ESD Protection Robustness Using SiGe Source/Drain Regions in Tunnel FET
Currently, a tunnel field-effect transistor (TFET) is being considered as a suitable electrostatic discharge (ESD) protection device in advanced technology. In addition, silicon-germanium (SiGe) engineering is shown to improve the performance of TFET-based ESD protection devices. In this paper, a ne...
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| izdano v: | Micromachines (Basel) |
|---|---|
| Main Authors: | , , , |
| Format: | Artigo |
| Jezik: | Inglês |
| Izdano: |
MDPI
2018
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| Teme: | |
| Online dostop: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6316336/ https://ncbi.nlm.nih.gov/pubmed/30545073 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/mi9120657 |
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