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Remote Phonon Scattering in Two-Dimensional InSe FETs with High-κ Gate Stack
This work focuses on the effect of remote phonon arising from the substrate and high-κ gate dielectric on electron mobility in two-dimensional (2D) InSe field-effect transistors (FETs). The electrostatic characteristic under quantum confinement is derived by self-consistently solving the Poisson and...
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| Pubblicato in: | Micromachines (Basel) |
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| Autori principali: | , , , |
| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
MDPI
2018
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| Soggetti: | |
| Accesso online: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6316064/ https://ncbi.nlm.nih.gov/pubmed/30572574 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/mi9120674 |
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