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Step-Double-Zone-JTE for SiC Devices with Increased Tolerance to JTE Dose and Surface Charges
In this paper, an edge termination structure, referred to as step-double-zone junction termination extension (Step-DZ-JTE), is proposed. Step-DZ-JTE further improves the distribution of the electric field (EF) by its own step shape. Step-DZ-JTE and other termination structures are investigated for c...
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| 出版年: | Micromachines (Basel) |
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| 主要な著者: | , , , , , |
| フォーマット: | Artigo |
| 言語: | Inglês |
| 出版事項: |
MDPI
2018
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| 主題: | |
| オンライン･アクセス: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6315798/ https://ncbi.nlm.nih.gov/pubmed/30469458 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/mi9120610 |
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