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Characterization and Fabrication of the CFM-JTE for 4H-SiC Power Device with High-Efficiency Protection and Increased JTE Dose Tolerance Window
A 13.5 kV 4H-SiC PiN rectifier with a considerable active area of 0.1 cm(2) is fabricated in this paper. Charge-field-modulated junction termination extension (CFM-JTE) has been proposed for satisfying the requirement of ultra-high reverse voltage, which enlarges the JTE dose tolerance window, makin...
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| Publicado no: | Nanoscale Res Lett |
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| Main Authors: | , , , , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Springer US
2020
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7655890/ https://ncbi.nlm.nih.gov/pubmed/33170390 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-020-03443-5 |
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