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Investigation of Energy Band at Atomic-Layer-Deposited ZnO/β-Ga(2)O(3) ([Formula: see text] ) Heterojunctions
The energy band alignment of ZnO/β-Ga(2)O(3) ([Formula: see text] ) heterojunction was characterized by X-ray photoelectron spectroscopy (XPS). The ZnO films were grown by using atomic layer deposition at various temperatures. A type-I band alignment was identified for all the ZnO/β-Ga(2)O(3) hetero...
Wedi'i Gadw mewn:
| Cyhoeddwyd yn: | Nanoscale Res Lett |
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| Prif Awduron: | , , , , , , |
| Fformat: | Artigo |
| Iaith: | Inglês |
| Cyhoeddwyd: |
Springer US
2018
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| Pynciau: | |
| Mynediad Ar-lein: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6305258/ https://ncbi.nlm.nih.gov/pubmed/30584649 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-018-2832-7 |
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