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Investigation of energy band at atomic layer deposited AZO/β-Ga(2)O(3) ([Formula: see text] ) heterojunctions
The Al-doped effects on the band offsets of ZnO/β-Ga(2)O(3) interfaces are characterized by X-ray photoelectron spectroscopy and calculated by first-principle simulations. The conduction band offsets vary from 1.39 to 1.67 eV, the valence band offsets reduce from 0.06 to − 0.42 eV, exhibiting an alm...
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| Publicado no: | Nanoscale Res Lett |
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| Main Authors: | , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Springer US
2019
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6694324/ https://ncbi.nlm.nih.gov/pubmed/31414235 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-019-3092-x |
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