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High Performance Seesaw Torsional CMOS-MEMS Relay Using Tungsten VIA Layer
In this paper, a seesaw torsional relay monolithically integrated in a standard 0.35 μm complementary metal oxide semiconductor (CMOS) technology is presented. The seesaw relay is fabricated using the Back-End-Of-Line (BEOL) layers available, specifically using the tungsten VIA3 layer of a 0.35 μm C...
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| Publicado no: | Micromachines (Basel) |
|---|---|
| Main Authors: | , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
MDPI
2018
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6266664/ https://ncbi.nlm.nih.gov/pubmed/30405006 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/mi9110579 |
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