InGaAs Diodes for Terahertz Sensing—Effect of Molecular Beam Epitaxy Growth Conditions

InGaAs-based bow-tie diodes for the terahertz (THz) range are found to be well suited for development of compact THz imaging systems. To further optimize design for sensitive and broadband THz detection, one of the major challenges remains: to understand the noise origin, influence of growth conditi...

ver descrição completa

Na minha lista:
Detalhes bibliográficos
Publicado no:Sensors (Basel)
Main Authors: Palenskis, Vilius, Minkevičius, Linas, Matukas, Jonas, Jokubauskis, Domas, Pralgauskaitė, Sandra, Seliuta, Dalius, Čechavičius, Bronislovas, Butkutė, Renata, Valušis, Gintaras
Formato: Artigo
Idioma:Inglês
Publicado em: MDPI 2018
Assuntos:
Article
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC6264118/
https://ncbi.nlm.nih.gov/pubmed/30400312
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/s18113760
Tags: Adicionar Tag
Sem tags, seja o primeiro a adicionar uma tag!

Registos relacionados