InGaAs Diodes for Terahertz Sensing—Effect of Molecular Beam Epitaxy Growth Conditions

InGaAs-based bow-tie diodes for the terahertz (THz) range are found to be well suited for development of compact THz imaging systems. To further optimize design for sensitive and broadband THz detection, one of the major challenges remains: to understand the noise origin, influence of growth conditi...

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Publicat a:Sensors (Basel)
Autors principals: Palenskis, Vilius, Minkevičius, Linas, Matukas, Jonas, Jokubauskis, Domas, Pralgauskaitė, Sandra, Seliuta, Dalius, Čechavičius, Bronislovas, Butkutė, Renata, Valušis, Gintaras
Format: Artigo
Idioma:Inglês
Publicat: MDPI 2018
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Article
Accés en línia:https://ncbi.nlm.nih.gov/pmc/articles/PMC6264118/
https://ncbi.nlm.nih.gov/pubmed/30400312
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/s18113760
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