טוען...
Thickness Dependence on Interfacial and Electrical Properties in Atomic Layer Deposited AlN on c-plane GaN
The interfacial and electrical properties of atomic layer deposited AlN on n-GaN with different AlN thicknesses were investigated. According to capacitance–voltage (C–V) characteristics, the sample with a 7.4-nm-thick AlN showed the highest interface and oxide trap densities. When the AlN thickness...
שמור ב:
| הוצא לאור ב: | Nanoscale Res Lett |
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| Main Authors: | , , |
| פורמט: | Artigo |
| שפה: | Inglês |
| יצא לאור: |
Springer US
2018
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| נושאים: | |
| גישה מקוונת: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6086779/ https://ncbi.nlm.nih.gov/pubmed/30097798 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-018-2645-8 |
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