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Electrometry by optical charge conversion of deep defects in 4H-SiC
Optically active point defects in various host materials, such as diamond and silicon carbide (SiC), have shown significant promise as local sensors of magnetic fields, electric fields, strain, and temperature. Modern sensing techniques take advantage of the relaxation and coherence times of the spi...
Tallennettuna:
| Julkaisussa: | Proc Natl Acad Sci U S A |
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| Päätekijät: | , , |
| Aineistotyyppi: | Artigo |
| Kieli: | Inglês |
| Julkaistu: |
National Academy of Sciences
2018
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| Aiheet: | |
| Linkit: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6077694/ https://ncbi.nlm.nih.gov/pubmed/30012622 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1073/pnas.1806998115 |
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