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Optical charge state control of spin defects in 4H-SiC
Defects in silicon carbide (SiC) have emerged as a favorable platform for optically active spin-based quantum technologies. Spin qubits exist in specific charge states of these defects, where the ability to control these states can provide enhanced spin-dependent readout and long-term charge stabili...
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| Yayımlandı: | Nat Commun |
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| Asıl Yazarlar: | , , , , , , , |
| Materyal Türü: | Artigo |
| Dil: | Inglês |
| Baskı/Yayın Bilgisi: |
Nature Publishing Group UK
2017
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| Konular: | |
| Online Erişim: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5709515/ https://ncbi.nlm.nih.gov/pubmed/29192288 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41467-017-01993-4 |
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