A carregar...
Quantum Efficiency Enhancement of a GaN-Based Green Light-Emitting Diode by a Graded Indium Composition p-Type InGaN Layer
We propose a graded indium composition p-type InGaN (p-InGaN) conduction layer to replace the p-type AlGaN electron blocking layer and a p-GaN layer in order to enhance the light output power of a GaN-based green light-emitting diode (LED). The indium composition of the p-InGaN layer decreased from...
Na minha lista:
| Publicado no: | Nanomaterials (Basel) |
|---|---|
| Main Authors: | , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
MDPI
2018
|
| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6071233/ https://ncbi.nlm.nih.gov/pubmed/29987245 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/nano8070512 |
| Tags: |
Adicionar Tag
Sem tags, seja o primeiro a adicionar uma tag!
|