Photoluminescence of planar and 3D InGaN/GaN LED structures excited with femtosecond laser pulses close to the damage threshold

We study the photoluminescence emission from planar and 3D InGaN/GaN LED structures, excited using a femtosecond laser with fluences close to sample’s damage threshold. For a typical laser system consisting of a titanium-sapphire regenerative amplifier, which is pumping an optical parametric amplifi...

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Detalhes bibliográficos
Publicado no:Sci Rep
Main Authors: Jaros, Angelina, Hartmann, Jana, Zhou, Hao, Szafranski, Barbara, Strassburg, Martin, Avramescu, Adrian, Waag, Andreas, Voss, Tobias
Formato: Artigo
Idioma:Inglês
Publicado em: Nature Publishing Group UK 2018
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Article
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC6070511/
https://ncbi.nlm.nih.gov/pubmed/30068911
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-018-29981-8
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