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The effects of nanocavity and photonic crystal in InGaN/GaN nanorod LED arrays
InGaN/GaN nanorod light-emitting diode (LED) arrays were fabricated using nanoimprint and reactive ion etching. The diameters of the nanorods range from 120 to 300 nm. The integral photoluminescence (PL) intensity for 120 nm nanorod LED array is enhanced as 13 times compared to that of the planar on...
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| Publicado no: | Nanoscale Res Lett |
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| Main Authors: | , , , , , , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Springer US
2016
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4954795/ https://ncbi.nlm.nih.gov/pubmed/27440081 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-016-1548-9 |
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