The effects of nanocavity and photonic crystal in InGaN/GaN nanorod LED arrays

InGaN/GaN nanorod light-emitting diode (LED) arrays were fabricated using nanoimprint and reactive ion etching. The diameters of the nanorods range from 120 to 300 nm. The integral photoluminescence (PL) intensity for 120 nm nanorod LED array is enhanced as 13 times compared to that of the planar on...

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Veröffentlicht in:Nanoscale Res Lett
Hauptverfasser: Jiao, Qianqian, Chen, Zhizhong, Feng, Yulong, Li, Shunfeng, Jiang, Shengxiang, Li, Junze, Chen, Yifan, Yu, Tongjun, Kang, Xiangning, Shen, Bo, Zhang, Guoyi
Format: Artigo
Sprache:Inglês
Veröffentlicht: Springer US 2016
Schlagworte:
Nano Express
Online Zugang:https://ncbi.nlm.nih.gov/pmc/articles/PMC4954795/
https://ncbi.nlm.nih.gov/pubmed/27440081
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-016-1548-9
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