The effects of nanocavity and photonic crystal in InGaN/GaN nanorod LED arrays

InGaN/GaN nanorod light-emitting diode (LED) arrays were fabricated using nanoimprint and reactive ion etching. The diameters of the nanorods range from 120 to 300 nm. The integral photoluminescence (PL) intensity for 120 nm nanorod LED array is enhanced as 13 times compared to that of the planar on...

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Detaylı Bibliyografya
Yayımlandı:Nanoscale Res Lett
Asıl Yazarlar: Jiao, Qianqian, Chen, Zhizhong, Feng, Yulong, Li, Shunfeng, Jiang, Shengxiang, Li, Junze, Chen, Yifan, Yu, Tongjun, Kang, Xiangning, Shen, Bo, Zhang, Guoyi
Materyal Türü: Artigo
Dil:Inglês
Baskı/Yayın Bilgisi: Springer US 2016
Konular:
Nano Express
Online Erişim:https://ncbi.nlm.nih.gov/pmc/articles/PMC4954795/
https://ncbi.nlm.nih.gov/pubmed/27440081
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-016-1548-9
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