The effects of nanocavity and photonic crystal in InGaN/GaN nanorod LED arrays

InGaN/GaN nanorod light-emitting diode (LED) arrays were fabricated using nanoimprint and reactive ion etching. The diameters of the nanorods range from 120 to 300 nm. The integral photoluminescence (PL) intensity for 120 nm nanorod LED array is enhanced as 13 times compared to that of the planar on...

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Salvato in:
Dettagli Bibliografici
Pubblicato in:Nanoscale Res Lett
Autori principali: Jiao, Qianqian, Chen, Zhizhong, Feng, Yulong, Li, Shunfeng, Jiang, Shengxiang, Li, Junze, Chen, Yifan, Yu, Tongjun, Kang, Xiangning, Shen, Bo, Zhang, Guoyi
Natura: Artigo
Lingua:Inglês
Pubblicazione: Springer US 2016
Soggetti:
Nano Express
Accesso online:https://ncbi.nlm.nih.gov/pmc/articles/PMC4954795/
https://ncbi.nlm.nih.gov/pubmed/27440081
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-016-1548-9
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