Elastic Relaxation of Coherent InGaN/GaN Interfaces at the Microwire LED Sidewall
Abstract Elastic relaxation of lattice misfit strain via traction‐free surface results in complex 3D strain distribution and morphological modification at the boundary of epitaxial heterostructure. While this phenomenon is extensively studied, the influence of the interface coherency constraining th...
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| Hauptverfasser: | , , , , , |
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| Format: | Artigo |
| Sprache: | Inglês |
| Veröffentlicht: |
Wiley
2025-05-01
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| Schriftenreihe: | Advanced Science |
| Schlagworte: | |
| Online-Zugang: | https://doi.org/10.1002/advs.202408736 |
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