Elastic Relaxation of Coherent InGaN/GaN Interfaces at the Microwire LED Sidewall
Abstract Elastic relaxation of lattice misfit strain via traction‐free surface results in complex 3D strain distribution and morphological modification at the boundary of epitaxial heterostructure. While this phenomenon is extensively studied, the influence of the interface coherency constraining th...
Kaydedildi:
| Asıl Yazarlar: | , , , , , |
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| Materyal Türü: | Artigo |
| Dil: | Inglês |
| Baskı/Yayın Bilgisi: |
Wiley
2025-05-01
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| Seri Bilgileri: | Advanced Science |
| Konular: | |
| Online Erişim: | https://doi.org/10.1002/advs.202408736 |
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