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Reduction of the forming voltage through tailored oxygen non-stoichiometry in tantalum oxide ReRAM devices
In this study, we investigated the influence of oxygen non-stoichiometry on the resistive switching performance of tantalum oxide based memristive devices. Thin-films of tantalum oxide were deposited with varying sputter power and oxygen partial pressure. The electroforming voltage was found to decr...
שמור ב:
| הוצא לאור ב: | Sci Rep |
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| Main Authors: | , , , , , |
| פורמט: | Artigo |
| שפה: | Inglês |
| יצא לאור: |
Nature Publishing Group UK
2018
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| נושאים: | |
| גישה מקוונת: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6052165/ https://ncbi.nlm.nih.gov/pubmed/30022129 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-018-28992-9 |
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