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Vertical-type two-dimensional hole gas diamond metal oxide semiconductor field-effect transistors
Power semiconductor devices require low on-resistivity and high breakdown voltages simultaneously. Vertical-type metal-oxide-semiconductor field-effect transistors (MOSFETs) meet these requirements, but have been incompleteness in diamond. Here we show vertical-type p-channel diamond MOSFETs with tr...
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| Publicado no: | Sci Rep |
|---|---|
| Main Authors: | , , , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Nature Publishing Group UK
2018
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6045668/ https://ncbi.nlm.nih.gov/pubmed/30006560 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-018-28837-5 |
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