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Durability-enhanced two-dimensional hole gas of C-H diamond surface for complementary power inverter applications
Complementary power field effect transistors (FETs) based on wide bandgap materials not only provide high-voltage switching capability with the reduction of on-resistance and switching losses, but also enable a smart inverter system by the dramatic simplification of external circuits. However, p-cha...
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| Publicado en: | Sci Rep |
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| Autores principales: | , , , , , , , , , |
| Formato: | Artigo |
| Lenguaje: | Inglês |
| Publicado: |
Nature Publishing Group
2017
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| Materias: | |
| Acceso en línea: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5316979/ https://ncbi.nlm.nih.gov/pubmed/28218234 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep42368 |
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