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Two-Dimensional MX2 Semiconductors for Sub-5 nm Junctionless Field Effect Transistors
Two-dimensional transitional metal dichalcogenide (TMDC) field-effect transistors (FETs) are proposed to be promising for devices scaling beyond silicon-based devices. We explore the different effective mass and bandgap of the channel materials and figure out the possible candidates for high-perform...
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| Izdano u: | Materials (Basel) |
|---|---|
| Glavni autori: | , , , |
| Format: | Artigo |
| Jezik: | Inglês |
| Izdano: |
MDPI
2018
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| Teme: | |
| Online pristup: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5873009/ https://ncbi.nlm.nih.gov/pubmed/29543770 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma11030430 |
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