ロード中...
Two-Dimensional MX2 Semiconductors for Sub-5 nm Junctionless Field Effect Transistors
Two-dimensional transitional metal dichalcogenide (TMDC) field-effect transistors (FETs) are proposed to be promising for devices scaling beyond silicon-based devices. We explore the different effective mass and bandgap of the channel materials and figure out the possible candidates for high-perform...
保存先:
| 出版年: | Materials (Basel) |
|---|---|
| 主要な著者: | , , , |
| フォーマット: | Artigo |
| 言語: | Inglês |
| 出版事項: |
MDPI
2018
|
| 主題: | |
| オンライン･アクセス: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5873009/ https://ncbi.nlm.nih.gov/pubmed/29543770 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma11030430 |
| タグ: |
タグ追加
タグなし, このレコードへの初めてのタグを付けませんか!
|