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Effect of annealing treatments on CeO(2) grown on TiN and Si substrates by atomic layer deposition
In this work, we investigate the effect of thermal treatment on CeO(2) films fabricated by using atomic layer deposition (ALD) on titanium nitride (TiN) or on silicon (Si) substrates. In particular, we report on the structural, chemical and morphological properties of 25 nm thick ceria oxide with pa...
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| Foilsithe in: | Beilstein J Nanotechnol |
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| Main Authors: | , , , |
| Formáid: | Artigo |
| Teanga: | Inglês |
| Foilsithe: |
Beilstein-Institut
2018
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| Ábhair: | |
| Rochtain Ar Líne: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5870165/ https://ncbi.nlm.nih.gov/pubmed/29600150 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3762/bjnano.9.83 |
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