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A soft lithographic approach to fabricate InAs nanowire field-effect transistors
The epitaxial layer transfer process was previously introduced to integrate high-quality and ultrathin III-V compound semiconductor layers on any substrate. However, this technique has limitation for fabrication of sub-micron nanoribbons due to the diffraction limit of photolithography. In order to...
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| Publicado no: | Sci Rep |
|---|---|
| Main Authors: | , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Nature Publishing Group UK
2018
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5816620/ https://ncbi.nlm.nih.gov/pubmed/29453402 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-018-21420-y |
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