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Sensing Responses Based on Transfer Characteristics of InAs Nanowire Field-Effect Transistors
Nanowire-based field-effect transistors (FETs) have demonstrated considerable promise for a new generation of chemical and biological sensors. Indium arsenide (InAs), by virtue of its high electron mobility and intrinsic surface accumulation layer of electrons, holds properties beneficial for creati...
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| Publicado no: | Sensors (Basel) |
|---|---|
| Main Authors: | , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
MDPI
2017
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5539772/ https://ncbi.nlm.nih.gov/pubmed/28714903 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/s17071640 |
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