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Se-doping dependence of the transport properties in CBE-grown InAs nanowire field effect transistors
We investigated the transport properties of lateral gate field effect transistors (FET) that have been realized by employing, as active elements, (111) B-oriented InAs nanowires grown by chemical beam epitaxy with different Se-doping concentrations. On the basis of electrical measurements, it was fo...
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| Main Authors: | , , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Springer
2012
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3311085/ https://ncbi.nlm.nih.gov/pubmed/22373361 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-7-159 |
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