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New strategies for producing defect free SiGe strained nanolayers
Strain engineering is seen as a cost-effective way to improve the properties of electronic devices. However, this technique is limited by the development of the Asarro Tiller Grinfeld growth instability and nucleation of dislocations. Two strain engineering processes have been developed, fabrication...
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| Yayımlandı: | Sci Rep |
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| Asıl Yazarlar: | , , , , , , , |
| Materyal Türü: | Artigo |
| Dil: | Inglês |
| Baskı/Yayın Bilgisi: |
Nature Publishing Group UK
2018
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| Konular: | |
| Online Erişim: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5811444/ https://ncbi.nlm.nih.gov/pubmed/29440693 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-018-21299-9 |
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