Učitavanje...
Controlling bottom-up rapid growth of single crystalline gallium nitride nanowires on silicon
We report single crystalline gallium nitride nanowire growth from Ni and Ni-Au catalysts on silicon using hydride vapor phase epitaxy. The growth takes place rapidly; efficiency in time is higher than the conventional nanowire growth in metal-organic chemical vapor deposition and thin film growth in...
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| Izdano u: | Sci Rep |
|---|---|
| Glavni autori: | , , , , , |
| Format: | Artigo |
| Jezik: | Inglês |
| Izdano: |
Nature Publishing Group UK
2017
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| Teme: | |
| Online pristup: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5738410/ https://ncbi.nlm.nih.gov/pubmed/29263368 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-017-17980-0 |
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