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Radiation Resistance of Silicon Carbide Schottky Diode Detectors in D-T Fusion Neutron Detection
Silicon carbide (SiC) is a wide band-gap semiconductor material with many excellent properties, showing great potential in fusion neutron detection. The radiation resistance of 4H-SiC Schottky diode detectors was studied experimentally by carefully analyzing the detectors’ properties before and afte...
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| I publikationen: | Sci Rep |
|---|---|
| Huvudupphovsmän: | , , , , , |
| Materialtyp: | Artigo |
| Språk: | Inglês |
| Publicerad: |
Nature Publishing Group UK
2017
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| Ämnen: | |
| Länkar: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5645392/ https://ncbi.nlm.nih.gov/pubmed/29042625 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-017-13715-3 |
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