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A doping-less junction-formation mechanism between n-silicon and an atomically thin boron layer
The interest in nanostructures of silicon and its dopants has significantly increased. We report the creation of an ultimately-shallow junction at the surface of n-type silicon with excellent electrical and optical characteristics made by depositing an atomically thin boron layer at a relatively low...
Gorde:
| Argitaratua izan da: | Sci Rep |
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| Egile Nagusiak: | , , |
| Formatua: | Artigo |
| Hizkuntza: | Inglês |
| Argitaratua: |
Nature Publishing Group UK
2017
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| Gaiak: | |
| Sarrera elektronikoa: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5643333/ https://ncbi.nlm.nih.gov/pubmed/29038490 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-017-13100-0 |
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