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Large Lateral Photovoltaic Effect in MoS(2)/GaAs Heterojunction
Molybdenum disulfide (MoS(2)) nanoscaled films are deposited on GaAs substrates via magnetron sputtering technique, and MoS(2)/GaAs heterojunctions are fabricated. The lateral photovoltaic effect (LPE) of the fabricated MoS(2)/GaAs heterojunctions is investigated. The results show that a large LPE c...
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| 出版年: | Nanoscale Res Lett |
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| 主要な著者: | , , , , |
| フォーマット: | Artigo |
| 言語: | Inglês |
| 出版事項: |
Springer US
2017
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| 主題: | |
| オンライン･アクセス: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5635143/ https://ncbi.nlm.nih.gov/pubmed/29019043 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-017-2334-z |
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