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Intercalation of Si between MoS(2) layers
We report a combined experimental and theoretical study of the growth of sub-monolayer amounts of silicon (Si) on molybdenum disulfide (MoS(2)). At room temperature and low deposition rates we have found compelling evidence that the deposited Si atoms intercalate between the MoS(2) layers. Our evide...
Gorde:
| Argitaratua izan da: | Beilstein J Nanotechnol |
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| Egile Nagusiak: | , , , , , |
| Formatua: | Artigo |
| Hizkuntza: | Inglês |
| Argitaratua: |
Beilstein-Institut
2017
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| Gaiak: | |
| Sarrera elektronikoa: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5629401/ https://ncbi.nlm.nih.gov/pubmed/29046843 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3762/bjnano.8.196 |
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