Tuning the electrical transport of type II Weyl semimetal WTe(2) nanodevices by Ga+ ion implantation

Here we introduce lattice defects in WTe(2) by Ga+ implantation (GI), and study the effects of defects on the transport properties and electronic structures of the samples. Theoretical calculation shows that Te Frenkel defects is the dominant defect type, and Raman characterization results agree wit...

詳細記述

保存先:
書誌詳細
出版年:Sci Rep
主要な著者: Fu, Dongzhi, Zhang, Bingwen, Pan, Xingchen, Fei, Fucong, Chen, Yongda, Gao, Ming, Wu, Shuyi, He, Jian, Bai, Zhanbin, Pan, Yiming, Zhang, Qinfang, Wang, Xuefeng, Wu, Xinglong, Song, Fengqi
フォーマット: Artigo
言語:Inglês
出版事項: Nature Publishing Group UK 2017
主題:
Article
オンライン･アクセス:https://ncbi.nlm.nih.gov/pmc/articles/PMC5627286/
https://ncbi.nlm.nih.gov/pubmed/28978938
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-017-12865-8
タグ: タグ追加
タグなし, このレコードへの初めてのタグを付けませんか!

類似資料