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Tuning the electrical transport of type II Weyl semimetal WTe(2) nanodevices by Ga+ ion implantation
Here we introduce lattice defects in WTe(2) by Ga+ implantation (GI), and study the effects of defects on the transport properties and electronic structures of the samples. Theoretical calculation shows that Te Frenkel defects is the dominant defect type, and Raman characterization results agree wit...
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| Foilsithe in: | Sci Rep |
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| Main Authors: | , , , , , , , , , , , , , |
| Formáid: | Artigo |
| Teanga: | Inglês |
| Foilsithe: |
Nature Publishing Group UK
2017
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| Ábhair: | |
| Rochtain Ar Líne: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5627286/ https://ncbi.nlm.nih.gov/pubmed/28978938 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-017-12865-8 |
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