Tuning the electrical transport of type II Weyl semimetal WTe(2) nanodevices by Ga+ ion implantation

Here we introduce lattice defects in WTe(2) by Ga+ implantation (GI), and study the effects of defects on the transport properties and electronic structures of the samples. Theoretical calculation shows that Te Frenkel defects is the dominant defect type, and Raman characterization results agree wit...

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Detalhes bibliográficos
Publicado no:Sci Rep
Main Authors: Fu, Dongzhi, Zhang, Bingwen, Pan, Xingchen, Fei, Fucong, Chen, Yongda, Gao, Ming, Wu, Shuyi, He, Jian, Bai, Zhanbin, Pan, Yiming, Zhang, Qinfang, Wang, Xuefeng, Wu, Xinglong, Song, Fengqi
Formato: Artigo
Idioma:Inglês
Publicado em: Nature Publishing Group UK 2017
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Article
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC5627286/
https://ncbi.nlm.nih.gov/pubmed/28978938
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-017-12865-8
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