Tuning the electrical transport of type II Weyl semimetal WTe(2) nanodevices by Ga+ ion implantation

Here we introduce lattice defects in WTe(2) by Ga+ implantation (GI), and study the effects of defects on the transport properties and electronic structures of the samples. Theoretical calculation shows that Te Frenkel defects is the dominant defect type, and Raman characterization results agree wit...

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Gorde:
Xehetasun bibliografikoak
Argitaratua izan da:Sci Rep
Egile Nagusiak: Fu, Dongzhi, Zhang, Bingwen, Pan, Xingchen, Fei, Fucong, Chen, Yongda, Gao, Ming, Wu, Shuyi, He, Jian, Bai, Zhanbin, Pan, Yiming, Zhang, Qinfang, Wang, Xuefeng, Wu, Xinglong, Song, Fengqi
Formatua: Artigo
Hizkuntza:Inglês
Argitaratua: Nature Publishing Group UK 2017
Gaiak:
Article
Sarrera elektronikoa:https://ncbi.nlm.nih.gov/pmc/articles/PMC5627286/
https://ncbi.nlm.nih.gov/pubmed/28978938
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-017-12865-8
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