Tuning the electrical transport of type II Weyl semimetal WTe(2) nanodevices by Ga+ ion implantation

Here we introduce lattice defects in WTe(2) by Ga+ implantation (GI), and study the effects of defects on the transport properties and electronic structures of the samples. Theoretical calculation shows that Te Frenkel defects is the dominant defect type, and Raman characterization results agree wit...

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Enregistré dans:
Détails bibliographiques
Publié dans:Sci Rep
Auteurs principaux: Fu, Dongzhi, Zhang, Bingwen, Pan, Xingchen, Fei, Fucong, Chen, Yongda, Gao, Ming, Wu, Shuyi, He, Jian, Bai, Zhanbin, Pan, Yiming, Zhang, Qinfang, Wang, Xuefeng, Wu, Xinglong, Song, Fengqi
Format: Artigo
Langue:Inglês
Publié: Nature Publishing Group UK 2017
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Article
Accès en ligne:https://ncbi.nlm.nih.gov/pmc/articles/PMC5627286/
https://ncbi.nlm.nih.gov/pubmed/28978938
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-017-12865-8
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