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Black Phosphorus Quantum Dots with Tunable Memory Properties and Multilevel Resistive Switching Characteristics

Solution‐processed black phosphorus quantum‐dot‐based resistive random access memory is demonstrated with tunable characteristics, multilevel data storage, and ultrahigh ON/OFF ratio. Effects of the black phosphorous quantum dots layer thickness and the compliance current setting on resistive switch...

Deskribapen osoa

Gorde:
Xehetasun bibliografikoak
Argitaratua izan da:Adv Sci (Weinh)
Egile Nagusiak: Han, Su‐Ting, Hu, Liang, Wang, Xiandi, Zhou, Ye, Zeng, Yu‐Jia, Ruan, Shuangchen, Pan, Caofeng, Peng, Zhengchun
Formatua: Artigo
Hizkuntza:Inglês
Argitaratua: John Wiley and Sons Inc. 2017
Gaiak:
Sarrera elektronikoa:https://ncbi.nlm.nih.gov/pmc/articles/PMC5566243/
https://ncbi.nlm.nih.gov/pubmed/28852609
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1002/advs.201600435
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